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| 3dnand-case.md [2026/05/18 14:50] – [Process steps for the isolation module of 3D-NAND] gauthier.roussilhe.ext | 3dnand-case.md [2026/06/22 15:28] (current) – [Archetype recipe] gauthier.roussilhe.ext | ||
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| | Xian-1 | | Xian-1 | ||
| | Xian-2 | | Xian-2 | ||
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| g | g | ||
| + | ## Archetype recipe | ||
| + | |||
| + | ### Total number of steps (front-end) | ||
| + | |||
| + | The total number of process steps depends of the number of layers on the 3D NAND die. Each layer adds 6 process steps. | ||
| + | |||
| + | The total number of process steps is defined by **(a.x+b)** | ||
| + | |||
| + | Where:< | ||
| + | |||
| + | **a** is the number of steps per layer | ||
| + | |||
| + | **x** is the number of layers | ||
| + | |||
| + | **b** is the number of fixed steps | ||
| + | |||
| + | Here: <br> | ||
| + | |||
| + | **a** = 6 | ||
| + | |||
| + | **x** = x | ||
| + | |||
| + | **b** = | ||
| + | x | ||
| + | ### Processes distribution | ||
| + | |||
| + | #### Fixed steps | ||
| + | |||
| + | * Cleaning: 40 (x%) | ||
| + | * Oxidation: 5 (x%) | ||
| + | * Photolithography: | ||
| + | * Etching: x (x%) | ||
| + | * Doping: 6 (x%) | ||
| + | * Deposition: 60 (x%) | ||
| + | * CMP: 6 (x%) | ||
| + | |||
| + | #### Variable steps (nb of layers) | ||
| + | |||
| + | * Cleaning: x (x%) | ||
| + | * Oxidation: x (x%) | ||
| + | * Photolithography: | ||
| + | * Etching: x (x%) | ||
| + | * Doping: x (x%) | ||
| + | * Deposition: x (x%) | ||
| + | * CMP: x (x%) | ||
| + | |||
| ## Process flow for 3D-NAND Flash | ## Process flow for 3D-NAND Flash | ||
| Line 117: | Line 164: | ||
| * Oxide CVD | * Oxide CVD | ||
| * Oxide CMP | * Oxide CMP | ||
| - | |||
| ### 3D NAND channel formation process steps | ### 3D NAND channel formation process steps | ||
| Line 136: | Line 182: | ||
| * PolySi CMP | * PolySi CMP | ||
| * Post-CMP clean | * Post-CMP clean | ||
| + | |||
| + | |||
| ### Process steps for the isolation module of 3D-NAND | ### Process steps for the isolation module of 3D-NAND | ||
| Line 157: | Line 205: | ||
| * W CMP | * W CMP | ||
| * Oxide cap deposition | * Oxide cap deposition | ||
| - | |||
| ### Process steps of the contact and interconnect module of 3D-NAND | ### Process steps of the contact and interconnect module of 3D-NAND | ||
| Line 201: | Line 248: | ||
| - | t | ||
| - | ## Process steps count | ||
| - | |||
| - | ### Fixed steps | ||
| - | |||
| - | * Cleaning: 40 | ||
| - | * Oxidation: 5 | ||
| - | * Photolithography: | ||
| - | * Etching: x | ||
| - | * Doping: 6 | ||
| - | * Deposition: 60 | ||
| - | * CMP: 6 | ||
| - | |||
| - | ### Variable steps | ||
| - | |||
| - | The total number of process steps depends of the number of layers on the 3D NAND die. Each layer adds 4 process steps (LELE). The repeating steps for each layer are: | ||
| - | * x | ||
| - | * x | ||
| - | * x | ||
| - | * x | ||