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--- 3dnand-case.md [2026/05/18 16:58] – [Variable steps] gauthier.roussilhe.ext
+++ 3dnand-case.md [2026/06/22 15:28] (current) – [Archetype recipe] gauthier.roussilhe.ext
@@ Line 38: / Line 38: @@
 | Xian-1       | Samsung      | 300mm      | China       | 20nm | 3DNAND       | 236L   |
 | Xian-2       | Samsung      | 300mm      | China       | 20nm | 3DNAND       | 176L   |
 g
+## Archetype recipe
+### Total number of steps (front-end)
+The total number of process steps depends of the number of layers on the 3D NAND die. Each layer adds 6 process steps.
+The total number of process steps is defined by **(a.x+b)**
+Where:<br>
+**a** is the number of steps per layer
+**x** is the number of layers
+**b** is the number of fixed steps
+Here: <br>
+**a** = 6
+**x** = x
+**b** =
+x
+### Processes distribution
+#### Fixed steps
+  * Cleaning: 40 (x%)
+  * Oxidation: 5 (x%)
+  * Photolithography: x (x%)
+  * Etching: x (x%)
+  * Doping: 6 (x%)
+  * Deposition: 60 (x%)
+  * CMP: 6 (x%)
+#### Variable steps (nb of layers)
+  * Cleaning: x (x%)
+  * Oxidation: x (x%)
+  * Photolithography: x (x%)
+  * Etching: x (x%)
+  * Doping: x (x%)
+  * Deposition: x (x%)
+  * CMP: x (x%)
 ## Process flow for 3D-NAND Flash
@@ Line 158: / Line 205: @@
   * W CMP
   * Oxide cap deposition
 ### Process steps of the contact and interconnect module of 3D-NAND
@@ Line 202: / Line 248: @@
-t
-## Process steps count
-### Fixed steps
-  * Cleaning: 40
-  * Oxidation: 5
-  * Photolithography: x
-  * Etching: x
-  * Doping: 6
-  * Deposition: 60
-  * CMP: 6
-### Variable steps
-The total number of process steps depends of the number of layers on the 3D NAND die. Each layer adds 4 process steps (ONON). The repeating steps for each layer are:
-  * x
-  * x
-  * x
-  * x