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3dnand-case.md [2026/06/22 15:25] – [Total number of steps] gauthier.roussilhe.ext3dnand-case.md [2026/06/22 15:28] (current) – [Archetype recipe] gauthier.roussilhe.ext
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 | Xian-1       | Samsung      | 300mm      | China       | 20nm | 3DNAND       | 236L   | | Xian-1       | Samsung      | 300mm      | China       | 20nm | 3DNAND       | 236L   |
 | Xian-2       | Samsung      | 300mm      | China       | 20nm | 3DNAND       | 176L   | | Xian-2       | Samsung      | 300mm      | China       | 20nm | 3DNAND       | 176L   |
 +
 g g
 ## Archetype recipe ## Archetype recipe
-### Total number of steps+ 
 +### Total number of steps (front-end)
  
 The total number of process steps depends of the number of layers on the 3D NAND die. Each layer adds 6 process steps. The total number of process steps depends of the number of layers on the 3D NAND die. Each layer adds 6 process steps.
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 The total number of process steps is defined by **(a.x+b)** The total number of process steps is defined by **(a.x+b)**
  
-Where:+Where:<br> 
 **a** is the number of steps per layer **a** is the number of steps per layer
  
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 **b** is the number of fixed steps **b** is the number of fixed steps
  
 +Here: <br>
 +
 +**a** = 6
 +
 +**x** = x
 +
 +**b** = 
 +x
 ### Processes distribution ### Processes distribution
 +
 +#### Fixed steps
  
   * Cleaning: 40 (x%)   * Cleaning: 40 (x%)
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   * Deposition: 60 (x%)   * Deposition: 60 (x%)
   * CMP: 6 (x%)   * CMP: 6 (x%)
 +
 +#### Variable steps (nb of layers)
 +
 +  * Cleaning: x (x%)
 +  * Oxidation: x (x%)
 +  * Photolithography: x (x%)
 +  * Etching: x (x%)
 +  * Doping: x (x%)
 +  * Deposition: x (x%)
 +  * CMP: x (x%)
  
 ## Process flow for 3D-NAND Flash ## Process flow for 3D-NAND Flash