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| intro_cmos [2026/06/30 13:10] – [Potential well] mathieu.ludden.ext | intro_cmos [2026/06/30 13:23] (current) – [Potential well] mathieu.ludden.ext | ||
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| The potential well in a CMOS image sensor is the electron storage region formed inside the N-type pinned photodiode. The combination of the N photodiode and the shallow P+ pinning layer creates a controlled electrostatic minimum that stores photoelectrons with low noise and allows efficient transfer during readout. This structure is the foundation of essentially all modern CMOS image sensors. | The potential well in a CMOS image sensor is the electron storage region formed inside the N-type pinned photodiode. The combination of the N photodiode and the shallow P+ pinning layer creates a controlled electrostatic minimum that stores photoelectrons with low noise and allows efficient transfer during readout. This structure is the foundation of essentially all modern CMOS image sensors. | ||
| - | The potential well will determine key sensor of the CMOS image sensor such as the Full Well Capacity (FWC), the Charge Transfer Efficiency (CTE), the dark current, the dynamic range, etc. | + | The potential well will determine key sensor of the CMOS image sensor such as the Full Well Capacity (FWC), the Charge Transfer Efficiency (CTE), the dark current, the dynamic range, etc.[(Measurement_of_charge_transfer_potential_barrier_in_pinned_photodiode_CMOS_image_sensors > [[https:// |
| ===== Working Principle ===== | ===== Working Principle ===== | ||