fab-process-flow.md
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| fab-process-flow.md [2026/03/24 16:03] – gauthier.roussilhe.ext | fab-process-flow.md [2026/03/27 09:58] (current) – [Full process flow for memory devices] gauthier.roussilhe.ext | ||
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| - | # Front-end manufacturing concepts and processes | + | # Front-end manufacturing concepts and process flow |
| Semiconductor manufacturing is among the most complex processes on Earth, if not the most complex. Summarizing the process flow of such an industry in simple terms is difficult given the specific requirements of each type of product produced. | Semiconductor manufacturing is among the most complex processes on Earth, if not the most complex. Summarizing the process flow of such an industry in simple terms is difficult given the specific requirements of each type of product produced. | ||
| Line 88: | Line 88: | ||
| * Franssila, S. (2010). Introduction to microfabrication. John Wiley & Sons. | * Franssila, S. (2010). Introduction to microfabrication. John Wiley & Sons. | ||
| * Jung, E. S. (2018, December). 4 th Industrial Revolution and Boundry: Challenges and Opportunities. In 2018 IEEE International Electron Devices Meeting (IEDM) (pp. 1-1). IEEE. | * Jung, E. S. (2018, December). 4 th Industrial Revolution and Boundry: Challenges and Opportunities. In 2018 IEEE International Electron Devices Meeting (IEDM) (pp. 1-1). IEEE. | ||
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| * Etch oxide and barrier nitride | * Etch oxide and barrier nitride | ||
| * PR strip and clean | * PR strip and clean | ||
| - | * CVD oxide_1, CVD Nitride_1 | + | * CVD oxide 1, CVD Nitride 1 and lower SG nitride |
| - | * CVD oxide_2, CVD Nitride_2 | + | * CVD oxide 2, CVD Nitride 2 and lower cell nitride |
| - | * CVD oxide_3, Nitride_3 | + | * CVD oxide 3, Nitride 3 pairs |
| - | | + | * Repeating the process until Oxide N/Nitride N |
| - | * CVD Oxide_N+1 and cap oxide | + | * CVD Oxide N+1 and cap oxide |
| * First staircase mask | * First staircase mask | ||
| - | * Etch Oxide_N+1/Nitride_N, stop on Oxide_N | + | * Etch Oxide N+1/Nitride N, stop on Oxide N |
| * PR trimming | * PR trimming | ||
| - | * Etch Oxide_N/Nitride_N-1, stop on Oxide_N-1 | + | * Etch Oxide N/Nitride N-1, stop on Oxide N-1 |
| * PR trimming | * PR trimming | ||
| - | * Etch Oxide_N-1/Nitride_N-2, stop on Oxide_N-2 | + | * Etch Oxide N-1/Nitride N-2, stop on Oxide N-2 |
| * *Repeating trimming and O/N pair etch* | * *Repeating trimming and O/N pair etch* | ||
| * PR strip and clean | * PR strip and clean | ||
| Line 372: | Line 371: | ||
| * *Third staircase mask* | * *Third staircase mask* | ||
| * *Repeating trimming and O/N pair etch* | * *Repeating trimming and O/N pair etch* | ||
| - | * Etch Oxide_1, stop on silicon | + | * Etch Oxide 1, stop on silicon |
| * PR strip and wafer clean | * PR strip and wafer clean | ||
| * Oxide CVD | * Oxide CVD | ||
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