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| fab-process-flow.md [2026/05/13 16:51] – [Yield modelling] gauthier.roussilhe.ext | fab-process-flow.md [2026/05/13 16:53] (current) – [Sources] gauthier.roussilhe.ext | ||
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| New advanced nodes (logic and memory) put an additional strain on fab production. According to SEMI : "since 2020, fab cycle times have grown at a compound annual growth rate of 14.8%. This represents a fundamental deceleration in fab throughput, meaning that even with the same number of tools and consistent utilization rates, the volume of wafers that can be processed is now structurally constrained." | New advanced nodes (logic and memory) put an additional strain on fab production. According to SEMI : "since 2020, fab cycle times have grown at a compound annual growth rate of 14.8%. This represents a fundamental deceleration in fab throughput, meaning that even with the same number of tools and consistent utilization rates, the volume of wafers that can be processed is now structurally constrained." | ||
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| ### Sources | ### Sources | ||
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| ### Sources | ### Sources | ||
| * May, G. S., & Spanos, C. J. (2006). Fundamentals of semiconductor manufacturing and process control. John Wiley & Sons. | * May, G. S., & Spanos, C. J. (2006). Fundamentals of semiconductor manufacturing and process control. John Wiley & Sons. | ||
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| ## Front-end process flow | ## Front-end process flow | ||
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| The process flow can be summarized in different ways. From a fab operations perspective, | The process flow can be summarized in different ways. From a fab operations perspective, | ||
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| Going deeper, Plummer et al decompose all the sub-steps that go into a photoresist deposition step for an old manufacturing process. On a more technical view, Franssila shows what happens in an epitaxy reactor, including sub-steps timing and temperature variation. | Going deeper, Plummer et al decompose all the sub-steps that go into a photoresist deposition step for an old manufacturing process. On a more technical view, Franssila shows what happens in an epitaxy reactor, including sub-steps timing and temperature variation. | ||
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| On more recent technology nodes, Jung shows the different steps depending of patterning techniques for logic and DRAM devices. The looping sequences are particulary visible here and shows the complexity depending of selected processes. | On more recent technology nodes, Jung shows the different steps depending of patterning techniques for logic and DRAM devices. The looping sequences are particulary visible here and shows the complexity depending of selected processes. | ||
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| More comprehensive process flows have been explored for [[dram-case.md|3D devices on RAM]] and [[3dnand-case.md|3D NAND Flash]]. | More comprehensive process flows have been explored for [[dram-case.md|3D devices on RAM]] and [[3dnand-case.md|3D NAND Flash]]. | ||