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front-end.md [2026/07/06 10:49] – [Manufacturers] eric.fourboul.extfront-end.md [2026/07/09 21:05] (current) – [Processes] eric.fourboul.ext
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        - water;         - water; 
        - abrasive particles (silica, alumina, ceria, depending on the process);        - abrasive particles (silica, alumina, ceria, depending on the process);
-       - chemical agents to oxidise, complex or selectively etch the material; +       - chemical agents to oxidise, complex or adjust pH; 
 There are three primary types  of CMP: oxide CMP, tungsten CMP, and copper CMP There are three primary types  of CMP: oxide CMP, tungsten CMP, and copper CMP
  
 #### 9.1. Oxide CMP #### 9.1. Oxide CMP
-Oxide CMP defines the electrical isolation geometry between every transistor on a chip.+Oxide CMP is primarily used to flatten dielectric layers. 
 +It is used to: 
 +  * flatten an interlayer dielectric (ILD); 
 +  * STI (Shallow Trench Isolation): after filling the isolation trenches; 
 +  * restoring the surface to a flat state before a new lithography or metallisation step; 
 +  * reducing the topography created by the previous steps. 
 ##### Inputs ##### Inputs
  
-  * Silica (SiO2)+  * Silica (SiO2) as abrasive
  Derived from TEOS (tetraethyl orthosilicate): Si(OCH₂CH₃)₄ or Si(OEt)₄ TEOS forms SiO₂ through simple hydrolysis, releasing ethanol (CH₃CH₂OH) :  Derived from TEOS (tetraethyl orthosilicate): Si(OCH₂CH₃)₄ or Si(OEt)₄ TEOS forms SiO₂ through simple hydrolysis, releasing ethanol (CH₃CH₂OH) :
 Si(OCH2CH3)4 + 2 H2O → SiO2 + 4 CH3CH2OH  Si(OCH2CH3)4 + 2 H2O → SiO2 + 4 CH3CH2OH 
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   * hydroxide ions (OH⁻)   * hydroxide ions (OH⁻)
 +  * Amoniac (NH3) as pH adjustor
 +  * Potassium hydroxyde (KOH) as pH adjustor 
  
 ##### Outputs ##### Outputs
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 #### 9.2. Tungsten CMP #### 9.2. Tungsten CMP
 +Tungsten CMP is used to remove excess tungsten after it has filled openings.
 +It is used to:
 +  * form contacts;
 +  * form tungsten-filled vias;
 +  * remove tungsten deposited everywhere except in the required cavities.
 The most widely used approach uses ferric nitrate (Fe(NO₃)₃) or hydrogen peroxide (H₂O₂) as the oxidising agent to convert the tungsten surface to a soft tungsten oxide (WO₃) layer, which is then mechanically removed by the abrasive.  The most widely used approach uses ferric nitrate (Fe(NO₃)₃) or hydrogen peroxide (H₂O₂) as the oxidising agent to convert the tungsten surface to a soft tungsten oxide (WO₃) layer, which is then mechanically removed by the abrasive. 
 ##### Inputs ##### Inputs
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 #### 9.3. Copper CMP #### 9.3. Copper CMP
 +Copper CMP is used to form copper interconnections, particularly in Damascene or dual-layer schemes
 +It is used to:
 +  * remove excess copper deposited on the surface;
 +  * leave copper only in the trenches and vias intended for interconnect lines;
 +  * planarise after metallisation.
 The most specific feature of copper CMP slurry is the use of benzotriazole (BTA) as a corrosion inhibitor.  The most specific feature of copper CMP slurry is the use of benzotriazole (BTA) as a corrosion inhibitor. 
 ##### Inputs ##### Inputs
   *  5-Methyl-1H-benzotriazole (C7H7N3)   *  5-Methyl-1H-benzotriazole (C7H7N3)
   * Copper (Cu)   * Copper (Cu)
-  * Silica (SiO2)+  * Silica (SiO2) as abrasive
   * hydrogen peroxide (H₂O₂)    * hydrogen peroxide (H₂O₂) 
   * Tantalum nitride (TaN)   * Tantalum nitride (TaN)
   * Tantalum (Ta)   * Tantalum (Ta)
- +  * Amoniac (NH3) as pH adjustor 
- +  * Sodium hydroxyde (NaOH) as pH adjustor 
-#### 9.1. Planarization +d
-  * Silicon dioxide (SiO2) +
-  * Aluminium oxide (Al2O3) +
-  * Cerium oxide (CeO2) +
-  * Deionized water (DI Water) +
-  * Hydrofluoric acid (HF) +
-  * Sulfuric acid (H2SO4) +
-  * Sodium hydroxide (NaOH) +
-  * Potassium hydroxide (KOH) +
-  * Ammonium hydroxide(NH4OH) +
- +
-##### Formula +
- +
-to add+
 ### Manufacturers ### Manufacturers
   * [Applied Materials](https://www.appliedmaterials.com/eu/en/product-library.html)   * [Applied Materials](https://www.appliedmaterials.com/eu/en/product-library.html)